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  2. Large thermoelectric figure of merit in graphene layered devices at low temperature

Large thermoelectric figure of merit in graphene layered devices at low temperature Artículos académico

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Resumen

  • Nanostructured materials have emerged as an alternative to enhance the figure of merit (ZT) of thermoelectric (TE) devices. Graphene exhibits a high electrical conductivity (in-plane) that is necessary for a high ZT; however, this effect is countered by its impressive thermal conductivity. In this work TE layered devices composed of electrochemically exfoliated graphene (EEG) and a phonon blocking material such as poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at the interface were prepared. The figure of merit, ZT, of each device was measured in the cross-plane direction using the Transient Harman Method (THM) and complemented with AFM-based measurements. The results show remarkable high ZT values (0.81 < ZT < 2.45) that are directly related with the topography, surface potential, capacitance gradient and resistance of the devices at the nanoscale.

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autores

  • http://research-hub.urosario.edu.co/ontology/vlocal#ExcludedPerson
    daniel gomez
  • http://research-hub.urosario.edu.co/ontology/vlocal#ExcludedPerson
    Daniel Olaya
  • http://research-hub.urosario.edu.co/ontology/vlocal#ExcludedPerson
    mikel hurtado morales
  • http://vivoweb.org/ontology/core#FacultyMember
    Octavio Alejandro Castañeda Uribe
  • http://research-hub.urosario.edu.co/ontology/vlocal#ExcludedPerson
    yenny hernandez
  • http://research-hub.urosario.edu.co/ontology/vlocal#ExcludedPerson
    Zhen Yu Juang

Edición

  • 5

fecha de publicación

  • 2018-1-1

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Identificador de objeto digital (DOI)

  • https://doi.org/10.1088/2053-1583/aa90d8